| PART |
Description |
Maker |
| RN2108FT RN2109FT |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN2710JE |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN1901FE RN1902FE RN1903FE RN1904FE RN1905FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN4984FE |
Transistor Silicon NPN PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN47A2 |
Transistor Silicon NPN PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA[Toshiba Semiconductor]
|
| RN4986FE |
Transistor Silicon NPN PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| KRC829E KRC827E KRC828E |
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KRX104U |
Built in Bias Resistor
EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KRX202U |
Built in Bias Resistor
EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KRC842T KRC845T KRC846T KRC841T KRC843T KRC844T |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) 外延平面NPN晶体管（大电流开关，接口电路及驱动电路）
Built in Bias Resistor
|
KEC Holdings
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| BU97530KVT |
Built-in OSC circuit
|
Rohm
|
| R3131N26EA5-TR R3131NXXXA R3130NXXXA R3130N36EA-TR |
Low Voltage Detector with built-in Delay Circuit
Low Voltage Detector with built in Delay Circuit
Low voltage detector with built-in delay circuit. Detector threshold 3.6V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 400ms. Output type Nch open drain. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 100ms. Output type CMOS. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 50ms. Output type CMOS. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Standard output delay time 240ms. Output type CMOS. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 50ms. Output type Nch open drain. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 100ms. Output type Nch open drain. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 200ms. Output type Nch open drain. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR.
|
Ricoh
|
